Devices and methods for testing of through silicon vias
AssigneeShanghai United Imaging Microelectronics Technology Co., Ltd.
InventorChangzhi SHI
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Abstract
The present disclosure provides a device, comprising: a substrate being provided with a through silicon via; at least one test assembly, each of the at least one test assembly including a surrounding structure, the surrounding structure being arranged around the through silicon via.
Claims20
A device, comprising:
- a substrate being provided with a through silicon via;
- at least one test assembly, each of the at least one test assembly including a surrounding structure, the surrounding structure being arranged around the through silicon via.
A method implemented on a device, the device including a substrate being provided with a through silicon via and at least one test assembly, the test assembly including at least one surrounding structure, the surrounding structure arranged around the through silicon via;
- the method comprising:
- applying a voltage difference to the at least one test assembly and the through silicon via;
- obtaining a current result generated by the at least one test assembly and the through silicon via at the voltage difference;
- determining at least one test result based on the current result.
A system, comprising:
- at least one storage medium including a set of instructions;
- at least one processor in communication with the at least one storage medium, wherein when executing the set of instructions, the at least one processor is directed to cause the system to perform operations including:
- applying a voltage difference to at least one test assembly and a through silicon via on a substrate;
- obtaining a current result generated by the at least one test assembly and the through silicon via at the voltage difference;
- determining at least one test result based on the current result.
Dependencies are inferred from the claim text.