Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film
AssigneeSoitec
InventorsBruno Ghyselen, Jean-Marc Bethoux
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Abstract
A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.
Claims20
A structure comprising successively a support substrate, a single-crystal metal film and a two-dimensional film of a group-IV material having a hexagonal crystal structure on the single-crystal metal film, wherein a difference between a coefficient of thermal expansion of the support substrate and a coefficient of thermal expansion of the two-dimensional film is smaller than a difference between a coefficient of thermal expansion of the single-crystal metal film and the coefficient of thermal expansion of the two-dimensional film.
A structure, comprising:
- a support substrate;
- a plurality of single-crystal metal blocks on the support substrate;
- and
- a two-dimensional film of a group IV-material having a hexagonal structure on the plurality of single-crystal metal blocks.
A structure, comprising:
- a support substrate;
- a single crystal metal-film on the support substrate;
- a two-dimensional film of a group IV-material having a hexagonal crystal structure on the single crystal metal film;
- and
- a removable interface disposed between the single-crystal metal film and the support substrate or buried within the support substrate.
Dependencies are inferred from the claim text.