Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and sic substrate

A monocrystalline SiC substrate produced from a sublimation-grown SiC volume monocrystal, the SiC substrate comprising:

• a) a total main surface being notionally divided into substrate segments each having an associated substrate segment area, with each of said substrate segments having a local screw dislocation substrate segment density which indicates a number of substrate screw dislocations present in the respective substrate segment relative to the associated substrate segment area of said substrate segment;
• b) a total screw dislocation substrate density that is applicable to the total main surface of the SiC substrate as a whole;
• and
• c) a sub-area that is formed by at least 85% of the total main surface, wherein the local screw dislocation substrate segment densities of all substrate segments lying within said sub-area deviate from the total screw dislocation substrate density by at most 25%.

A method of producing an SiC volume monocrystal by sublimation growth, the method comprising:

• providing an SiC seed crystal having a growth surface;
• examining the SiC seed crystal for a presence of seed screw dislocations by dividing the growth surface into seed segments and determining an associated local screw dislocation seed segment density for each seed segment;
• treating the SiC seed crystal to generate nucleation centers in each seed segment whose local screw dislocation seed segment density is at least a factor of 1.5 to 4 above a total screw dislocation seed density determined for the entire growth surface, the nucleation centers being starting points for compensation screw dislocations to be formed during a subsequent growth;
• arranging the SiC seed crystal in a crystal growth region of a growing crucible;
• introducing an SiC source material into an SiC storage region of the growing crucible;
• and
• setting a growth temperature of up to 2400° C. and a growth pressure between 0.1 mbar and 100 mbar, sublimating the SiC source material and transporting sublimated gaseous components into the crystal growth region for producing an SiC growth gas phase in the crystal growth region, and growing the SiC volume monocrystal on the SiC seed crystal by deposition from the SiC growth gas phase.