Multi-chamber apparatus and method for ald

An atomic layer deposition apparatus comprising:

• a first single substrate process chamber bounded by a first bottom part and a first top part for accommodating a substantially flat substrate between them, wherein opposite facing surfaces of the first bottom part and the first top part are parallel to each other and to two opposite main surfaces of the substrate, upon placement of the substrate between the first bottom part and the first top part, wherein the first bottom part and the first top part are moveable away from and towards each other between a process position in which the opposite facing surfaces of the first top part and the first bottom part are less than 2 mm from a respective main surface of a substrate accommodated between them and a substrate loading/unloading-position in which the distance between the opposite facing surfaces is larger than in the process position, wherein both the first bottom part and the first top part each comprise a plurality of gas supply openings for supplying gas in two gaps between on the one hand the two opposite main surfaces of the substrate accommodated in the first single substrate process chamber and on the other hand the opposite facing surfaces of the first top and bottom parts so as to form gas bearings on both sides of the substrate for floatingly supporting the substrate within the process chamber;
• a second single substrate process chamber bounded by a second bottom part and a second top part for accommodating a substantially flat substrate between them, wherein opposite facing surfaces of the second bottom part and the second top part are parallel to each other and to two opposite main surfaces of the substrate, upon placement of the substrate between the second bottom part and the second top part, wherein the second bottom part and the second top part are moveable away from and towards each other between a process position in which the opposite facing surfaces of the second top part and the second bottom part are less than 2 mm from a respective main surface of a substrate accommodated between them and a substrate loading/unloading-position in which the distance between the opposite facing surfaces is larger than in the process position, wherein both the second bottom part and the second top part each comprise a plurality of gas supply openings for supplying gas in two gaps between on the one hand the two opposite main surfaces of the substrate accommodated in the second single substrate process chamber and on the other hand the opposite facing surfaces of the second top and bottom parts so as to form gas bearings on both sides of the substrate for floatingly supporting the substrate within the process chamber;
• and
• a transfer mechanism configured to transfer the substrate between the first and the second process chambers.