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US 2023/0413573 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorMir IM
Life of this patent
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Abstract
A semiconductor device includes: a first memory including first capacitors that are vertically stacked in a first direction; and a second memory that is laterally spaced apart from the first memory in a second direction and that includes second capacitors that are vertically stacked in the first direction. The first capacitors may include ferroelectric capacitors, and the second capacitors may include paraelectric capacitors.
Claims20
A semiconductor device, comprising:
- a first memory including first capacitors that are vertically stacked in a first direction;
- and
- a second memory that is laterally spaced apart from the first memory in a second direction and that includes second capacitors that are vertically stacked in the first direction.
A semiconductor device, comprising:
- a first memory including ferroelectric capacitors that are vertically stacked in a first direction;
- and
- a second memory laterally spaced apart from the first memory and including paraelectric capacitors that are vertically stacked in the first direction,
- wherein each of the ferroelectric capacitors includes a first storage node having a vertical flat plate shape, and
- each of the paraelectric capacitors includes a cylindrical-shaped second storage node.
2 more elements
Dependencies are inferred from the claim text.