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US 2023/0413566 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKioxia Corporation
InventorsHideto TAKEKIDA, Junichi SHIBATA
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Abstract
In one embodiment, a semiconductor device includes a first substrate, a first transistor provided on an upper face of the first substrate, and a memory cell array provided above the first transistor. The device further includes a second substrate provided above the memory cell array, and a second transistor provided on an upper face of the second substrate.
Claims20
A semiconductor device comprising:
- a first substrate;
- a first transistor provided on an upper face of the first substrate;
- a memory cell array provided above the first transistor;
- a second substrate provided above the memory cell array;
- and
- a second transistor provided on an upper face of the second substrate.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a first transistor on a first substrate;
- forming a memory cell array above the first transistor;
- bonding a second substrate with the first substrate via the first transistor and the memory cell array;
- and
- forming a second transistor on the second substrate after the bonding.
2 more elements
Dependencies are inferred from the claim text.