US 2023/0413565 A1 · SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Abstract

A semiconductor device includes a stacked body, a semiconductor layer, a first insulating film, a first charge storage film, a second charge storage film, and a second insulating film. The stacked body includes an electrode layer and an insulating layer alternately stacked in a first direction. The semiconductor layer is disposed in the stacked body in the first direction. The first insulating film is disposed between the stacked body and the semiconductor layer. The first charge storage film is disposed between the stacked body and the first insulating film. The second charge storage film protrudes from the first charge storage film toward the electrode layer in a second direction crossing the first direction. The sum of thicknesses of the first charge storage film and the second charge storage film in the second direction is greater than a thickness of the first charge storage film in the second direction. The second insulating film is disposed between the electrode layer and the second charge storage film. A width of the second charge storage film in the first direction is greater than a width of the electrode layer in the first direction.

Claims18

Dependent claims

A semiconductor device comprising:

a stacked body including an electrode layer and an insulating layer alternately stacked in a first direction;
a semiconductor layer disposed in the stacked body in the first direction;
a first insulating film disposed between the stacked body and the semiconductor layer;
a first charge storage film disposed between the stacked body and the first insulating film;
a second charge storage film protruding from the first charge storage film toward the electrode layer in a second direction, the second direction crossing the first direction;
and
a second insulating film disposed between the electrode layer and the second charge storage film,
wherein a sum of thicknesses of the first charge storage film and the second charge storage film in the second direction is greater than a thickness of the first charge storage film in the second direction, and
a width of the second charge storage film in the first direction is greater than a width of the electrode layer in the first direction.

6 more elements

A manufacturing method of a semiconductor device, the manufacturing method comprising:

forming a stacked body including a sacrificial layer and an insulating layer alternately stacked in a first direction;
forming a hole penetrating the stacked body in the first direction;
forming a first film of an insulating body on an inner surface of the hole;
forming a first charge storage film on the first film;
forming a second film of the insulating body on the first charge storage film;
forming a semiconductor layer on the second film;
removing the sacrificial layer to expose the first film;
exposing, by partially removing the first film where an etching rate of the first film is greater than an etching rate of the insulating layer, the first charge storage film in a region where the sacrificial layer is removed and the first charge storage film in a part of a region corresponding to the insulating layer;
forming a second charge storage film on the exposed first charge storage film;
and
forming a third film of the insulating body on the second charge storage film.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims18