Memory storage device and method of manufacturing the same
AssigneeZhuhai Chuangfeixin Technology Co., Ltd.
InventorsLi Li, Zhigang Wang
Life of this patent
Estimating the term…
Abstract
A storage device for storing electron charges includes a substrate, a tunnel oxide layer formed on the substrate, a silicon-rich nitride layer comprising silicon nitride on the tunnel oxide layer, and a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide. The electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.
Claims16
A storage device for storing electron charges, comprising:
- a substrate;
- a tunnel oxide layer formed on the substrate;
- a silicon-rich nitride layer on the tunnel oxide layer, wherein the silicon-rich nitride layer comprises silicon nitride;
- and
- a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises oxynitride silicide,
- wherein electron traps in the modulated interface layer have deeper trap depths than in the silicon-rich nitride layer.
A storage device for storing electron charges, comprising:
- a substrate;
- a tunnel oxide layer formed on the substrate;
- a modulated interface layer on the tunnel oxide layer;
- and
- a silicon-rich nitride layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises a higher density of traps for electron charges than the silicon-rich nitride layer.
A method for making a storage device for storing electron charges, comprising:
- forming a tunnel oxide layer on a substrate;
- forming a silicon-rich nitride layer on the tunnel oxide layer, wherein the silicon-rich nitride layer includes silicon nitride;
- and
- forming a modulated interface layer on the silicon-rich nitride layer, wherein the modulated interface layer comprises silicon oxynitride, wherein the modulated interface layer is configured to trap a higher density of electron charges than the silicon-rich nitride layer.
A method for making a storage device for storing electron charges, comprising:
- forming a tunnel oxide layer on a substrate;
- forming a modulated interface layer on the tunnel oxide layer by chemical vapor deposition using a mixture of SiH4 and NH3 gases at a first gas mixture ratio;
- and
- forming a silicon-rich nitride layer on the modulated interface layer by chemical vapor deposition using a mixture of SiH4 and NH3 gases at a second gas mixture ratio lower than the first gas mixture ratio;
- wherein the modulated interface layer comprises a higher density of electron charges than the silicon-rich nitride layer.
Dependencies are inferred from the claim text.