Semiconductor storage device and method for manufacturing semiconductor storage device

A semiconductor memory device, comprising:

• a stacked body of insulating layers and conductor layers stacked one on the other;
• and
• a memory pillar extending in a first direction through the stacked body and including:
• a tunnel insulation film,
• a charge storage layer on the tunnel insulation film, and
• a first block insulation film on the charge storage layer and an outer peripheral surface of the memory pillar, wherein
• each conductor layer extends in a second direction intersecting the first direction and includes:
• a first layer of molybdenum, and
• a second layer of tungsten, wherein
• the first layer is between the memory pillar and the second layer in the second direction.

A method for manufacturing a semiconductor storage device, the method comprising:

• forming a memory pillar in a stacked body of insulating layers and sacrificial layers, the memory pillar having a charge storage layer on a tunnel insulation film, and a first block insulation film on the charge storage layer;
• removing the sacrificial layers from the stacked body, leaving void spaces in the positions of the removed sacrificial layers, each void space exposing a portion of the first block insulation film on an outer peripheral surface of the memory pillar;
• forming a second block insulation film on outer surfaces of the void spaces;
• forming a first layer in the void spaces on the second block insulation film, the first layer comprising molybdenum;
• and
• forming a second layer in the void spaces on the first layer, the second layer comprising tungsten.