Three-dimensional memory devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun Zhang, Wenxi Zhou, Shuangshuang Wu
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Abstract
Three-dimensional (3D) memory devices and methods for forming the same are disclosed. The 3D memory device includes a doped semiconductor layer, a source select gate line disposed on the doped semiconductor layer, a stack structure including interleaved conductive layers and dielectric layers formed on the source select gate line, and a channel structure extending through the stack structure and the source select gate line and in contact with the doped semiconductor layer. The channel structure includes a semiconductor channel and a memory film. The source select gate line is in contact with the semiconductor channel.
Claims20
A three-dimensional (3D) memory device, comprising:
- a doped semiconductor layer;
- a source select gate line disposed on the doped semiconductor layer, the source select gate line comprising a source select gate conductive layer surrounded by a source select gate dielectric layer;
- a stack structure comprising interleaved word lines and dielectric layers formed on the source select gate line, each word line comprising a gate electrode surrounded by a gate dielectric layer;
- and
- a channel structure extending through the stack structure and the source select gate line and in contact with the doped semiconductor layer, the channel structure comprising a semiconductor channel and a memory film,
- wherein the source select gate dielectric layer is in contact with the semiconductor channel, and the gate dielectric layer is in contact with the memory film.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a first sacrificial layer on a semiconductor layer;
- forming a dielectric stack comprising a plurality of first dielectric layers and a plurality of second dielectric layers interleaved on the first sacrificial layer, wherein the first sacrificial layer and the plurality of second dielectric layers comprise different materials;
- forming a channel structure extending through the dielectric stack, the channel structure in contact with the first sacrificial layer, and the channel structure comprising a semiconductor channel and a memory film;
- replacing the plurality of second dielectric layers with a plurality of word lines;
- removing the semiconductor layer and the first sacrificial layer to expose a portion of the channel structure;
- and
- forming a doped semiconductor layer on the channel structure.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a first sacrificial layer on a semiconductor layer;
- forming a dielectric stack comprising a plurality of first dielectric layers and a plurality of second dielectric layers interleaved on the first sacrificial layer, wherein the first sacrificial layer and the plurality of second dielectric layers comprise different materials;
- forming a channel structure extending through the dielectric stack and the first sacrificial layer in contact with the semiconductor layer, the channel structure comprising a semiconductor channel and a memory film;
- removing the first sacrificial layer to form a first cavity and expose a portion of the channel structure;
- removing the memory film of the portion of the channel structure exposed by the first cavity to expose the semiconductor channel of the portion of the channel structure;
- forming a source select gate line in the first cavity in contact with the semiconductor channel of the portion of the channel structure;
- and
- replacing the plurality of second dielectric layers with a plurality of word lines.
Dependencies are inferred from the claim text.