Semiconductor structure and formation method thereof, and memory

Abstract

Embodiments relate to a semiconductor structure and a formation method. The method includes: providing a base substrate, where the base substrate includes a substrate and an insulating material layer, the substrate includes a plurality of first trenches arranged at intervals along a first direction, and the insulating material layer fills each of the plurality of first trenches; etching the base substrate to form a plurality of second trenches arranged at intervals along a second direction, the second direction intersecting the first direction; removing a part of a material of the substrate below the plurality of second trenches to form third trenches below the plurality of second trenches, the third trenches penetrating through each of the plurality of second trenches; filling a conductive material into the third trenches to form bit line structures; and forming word line structures in the plurality of second trenches.

Dependencies are inferred from the claim text.