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US 2023/0413527 A1Published application
Capacitor structure and method of forming thereof
AssigneeNanya Technology Corporation
InventorsJyun-Hua YANG, Kai Hung LIN
Life of this patent
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Abstract
A method of forming a capacitor structure includes following operations. A first electrode is formed. A hafnium-zirconium oxide (HZO) layer is formed over the first electrode under a first temperature. An interface dielectric layer is formed over the HZO layer under a second temperature greater than the first temperature. A second electrode is formed over the interface dielectric layer. The HZO layer and the interface dielectric layer are annealed.
Claims4
A capacitor structure, comprising:
- a first electrode;
- a hafnium-zirconium oxide (HZO) layer formed over the first electrode;
- an interface dielectric layer formed over the HZO layer;
- and
- a second electrode formed over the interface dielectric layer, wherein the HZO layer and the interface dielectric layer are located between the first electrode and the second electrode, a first concentration of tetragonal crystal phase of the HZO layer is greater than a second concentration of tetragonal crystal phase of the interface dielectric layer.
2 more elements
Dependencies are inferred from the claim text.