Memory structure and manufacturing method thereof, and semiconductor structure

Abstract

The present disclosure relates to a semiconductor structure, including a columnar epitaxial structure, a grounding structure, a bit line structure, a columnar capacitor structure, and a word line structure. The columnar epitaxial structure extends in a first direction; the grounding structure wraps one end of the columnar epitaxial structure; the bit line structure wraps the other end of the columnar epitaxial structure; the columnar capacitor structure surrounds the columnar epitaxial structure, and is located between the grounding structure and the bit line structure; and the word line structure surrounds the columnar epitaxial structure, and is located between the bit line structure and the columnar capacitor structure.

Dependencies are inferred from the claim text.