Semiconductor memory device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a first etch stop layer; a source layer on the first etch stop layer; a second etch stop layer on the source layer; a stack structure on the second etch stop layer; and a channel structure penetrating the first and second etch stop layers, the source layer, and the stack structure, the channel structure being electrically connected to the source layer. A material of each of the first and second etch stop layers has an etch selectivity with respect to a material of the source layer.
Claims8
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a base part;
- sequentially forming, over the base part, a first etch stop layer, a source sacrificial layer, and a second etch stop layer;
- forming a stack structure, including insulating patterns, over the second etch stop layer;
- forming a channel structure that penetrates the stack structure, the second etch stop layer, the source sacrificial layer, and the first etch stop layer, wherein a portion of the channel structure is disposed in a portion of the base part;
- forming a first trench that penetrates the stack structure and the second etch stop layer;
- removing the source sacrificial layer;
- and
- forming a source layer between the first and second etch stop layers.
Dependencies are inferred from the claim text.