Cmut transducer and method for manufacturing a cmut transducer

A method of manufacturing a CMUT transducer, comprising the following steps:

• a) forming a first silicon oxide layer on a face of a first silicon layer defining a first electrode of the transducer;
• b) forming a second silicon oxide layer on a face of a second silicon layer;
• c) subsequent to step a), forming at the side of said face of the first silicon layer, by locally etching the silicon of the first silicon layer, silicon oxide walls having a height higher than the thickness of the first silicon oxide layer, said walls laterally delineating a cavity of the transducer;
• and
• d) subsequent to steps b) and c), transferring and attaching the set comprising the second silicon layer and the second silicon oxide layer on the set comprising the first silicon layer, the first silicon oxide layer, and the silicon oxide walls, so as to close the cavity of the transducer, said cavity vertically extending from the face of the first silicon oxide layer opposite to the first silicon layer to the face of the second silicon oxide layer opposite to the second silicon layer.