Method and structure for high performance resonance circuit with single crystal piezoelectric capacitor dielectric material

An acoustic resonator device comprising:

• a bond substrate;
• a bonding support layer overlying the bond substrate;
• a support layer overlying the bonding support layer, the support layer having an air cavity;
• a first electrode overlying the air cavity and a portion of the support layer;
• a first passivation layer overlying the support layer and being physically coupled to the first electrode;
• a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;
• a second electrode formed overlying the piezoelectric film;
• a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via;
• a first contact metal formed overlying a portion of the second electrode and the piezoelectric film;
• a second contact metal formed overlying a portion of the top metal and the piezoelectric film;
• and
• a second passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal;
• wherein the second passivation layer is characterized by a consistent thickness.