US 2023/0411930 A1Published application

Oxide Aperture Shaping In Vertical Cavity Surface-Emitting Laser

AssigneeII-Vi Delaware, Inc.

InventorsMirko Hoser, Abram Jakubowicz, Tomi Leinonen

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Abstract

A mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a suitable mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

Claims5

Dependent claims

A vertical cavity surface emitting laser (VCSEL) comprising:

a substrate having a top major surface;
a first distributed Bragg reflector (DBR) formed on the top major surface of the substrate, the first distributed Bragg reflector comprising a stack of layers of alternating refractive index value;
a second DBR disposed over the first DBR and comprising a stack of layers of alternating refractive index, the second DBR including a mesa structure of a predetermined cross-section geometry;
an active layer disposed between the first DBR and the second DBR;
and
an aperture layer including an interior oxide aperture region created by anisotropic oxidation, the interior oxide aperture exhibiting a defined cross-section based on the predetermined cross-section geometry of the mesa structure.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/229,317Filed 2 Aug 2023
Priority: 8 May 2019
Published: 21 Dec 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H01S 5/18327
Position of the structure: structure being part of a DBR
H01S 5/18311
Having a special structure for lateral current or light confinement: using selective oxidation
H01S 5/18313
Using selective oxidation: by oxidizing at least one of the DBR layers
H01S 5/18347
Characterized by the mesa, e.g. dimensions or shape of the mesa: mesa comprising active layer

Family

Application16/406,140Division · filed 8 May 2019
Application17/683,947Continuation · filed 1 Mar 2022
Application18/229,317Continuation
Application17/683,947Division
US 11,289,881 B2Related patent
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US 2020/0358252 A1Published application
US 2022/0190558 A1Published application
US 2023/0411930 A1This patent

From the US filing history. Foreign family members aren’t listed.

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