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AssigneeThe Regents of the University of California
InventorsSrinivas Gandrothula, Takeshi Kamikawa
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A method for fabricating and transferring high quality and manufacturable light-emitting devices, such as small sized light-emitting diodes (mLEDs), using epitaxial lateral overgrowth (ELO) and isolation methods. III-nitride ELO layers are grown on a host substrate using a growth restrict mask, and III-nitride device layers are grown on wings of the III-nitride ELO layers. The resulting devices are isolated from the host substrate while attached by a connecting link comprising an epitaxial or non-epitaxial bridge. A regrowth is performed on selected mesas of the device layers to realize improved devices with the help of the bridge. The bridge is broken, and the devices are then plucked from the host substrate and placed on a display panel.
A method of preparing a device, comprising:
The method of claim 23, further comprising performing device fabrication before breaking the connecting link.
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A method of preparing a device, comprising:
A device, comprising:
Dependencies are inferred from the claim text.