Multilayer high voltage radiation hard interconnections

Abstract

Various methods and systems are provided for three layer photolithography. In one embodiment, a process includes disposing a radiation hard dielectric layer on a substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×1015 of 1 MeV equivalent neutron radiation; patterning the radiation hard dielectric layer; and treating the radiation hard dielectric layer. In one embodiment, a device includes a substrate and a patterned radiation hard dielectric layer disposed on the substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×1015 of 1 MeV equivalent neutron radiation.

Dependencies are inferred from the claim text.