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US 2023/0411530 A1Published application
Semiconductor device and semiconductor memory device
AssigneeKioxia Corporation
InventorHiroki KAWAI
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes an oxide semiconductor layer, an oxide conductor layer disposed on the oxide semiconductor layer, a first oxide layer disposed on the oxide conductor layer and comprising vanadium oxide, and a metal wiring layer disposed on the first oxide layer.
Claims20
A semiconductor device, comprising:
- an oxide semiconductor layer;
- an oxide conductor layer on the oxide semiconductor layer;
- a first oxide layer on the oxide conductor layer and comprising vanadium oxide;
- and
- a metal wiring layer on the first oxide layer.
2 more elements
A surrounding gate transistor, comprising:
- an oxide semiconductor layer having a columnar shape extending in a first direction;
- a gate electrode surrounding an outer peripheral surface of the oxide semiconductor layer in a second direction perpendicular to the first direction;
- a gate insulating film between the gate electrode and the oxide semiconductor layer in the second direction;
- a second electrode on a first end of the oxide semiconductor layer in the first direction, the second electrode including:
- an oxide conductor layer at the first end of the oxide semiconductor layer,
- a first oxide layer on the oxide conductor layer and comprising vanadium oxide, and
- a metal wiring layer on the first oxide layer;
- and
- a third electrode on a second end of the oxide semiconductor layer in the first direction.
6 more elements
Dependencies are inferred from the claim text.