Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyo Jin Kim, Sang Moon Lee, Jin Bum Kim, Yong Jun Nam
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Abstract
A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.
Claims22
A semiconductor device comprising:
- a lower pattern extending in a first direction;
- a first blocking structure on the lower pattern and comprising at least one first blocking film, the first blocking film comprising an oxygen-doped crystalline silicon film;
- a source/drain pattern on the first blocking structure;
- and
- a gate structure extending in a second direction on the lower pattern and comprising a gate electrode and a gate insulating film.
A semiconductor device comprising:
- a lower pattern extending in a first direction;
- a blocking structure on the lower pattern and comprising at least one blocking film, the at least one blocking film comprising an oxygen-doped crystalline silicon film;
- a plurality of sheet patterns on the blocking structure and arranged in a second direction;
- a gate structure extending in a third direction on the lower pattern and comprising a gate electrode and a gate insulating film, the gate electrode overlapping the blocking structure in the second direction;
- and
- a source/drain pattern that overlaps the blocking structure in the second direction and is connected to the sheet pattern.
A semiconductor device comprising:
- a lower pattern that extends in a first direction and comprises a blocking structure recess;
- a blocking structure on the lower pattern and comprising a plurality of blocking films and one or more insertion semiconductor films, the blocking films comprising an oxygen-doped crystalline silicon film, and the insertion semiconductor films comprising a crystalline silicon film having a lower oxygen concentration than the blocking films;
- a plurality of sheet patterns on the lower pattern and arranged in a second direction;
- a source/drain pattern connected to the sheet pattern on the blocking structure and comprising n-type dopants;
- and
- a gate structure extending in a third direction on the lower pattern and comprising a gate electrode and a gate insulating film.
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-24. (canceled)
Dependencies are inferred from the claim text.