Semiconductor device

A semiconductor device comprising a pixel portion, the pixel portion comprising:

• a capacitor comprising a first oxide semiconductor film and a conductive film comprising a light-transmitting conductive material;
• a transistor comprising:
• a second oxide semiconductor film;
• a gate insulating film over the second oxide semiconductor film;
• a gate electrode over the gate insulating film;
• a source electrode electrically connected to the second oxide semiconductor film;
• and
• a drain electrode electrically connected to the second oxide semiconductor film;
• an insulating film over the source electrode and the drain electrode;
• and
• an organic resin film over the insulating film,
• wherein the transistor is electrically connected to the capacitor,
• wherein the gate electrode is provided in a same layer as the source electrode and the drain electrode,
• wherein the organic resin film comprises an opening portion,
• wherein the conductive film comprises a first region over the organic resin film,
• wherein the conductive film comprises a second region in the opening portion of the organic resin film,
• wherein the second region overlaps with the insulating film and the first oxide semiconductor film,
• wherein the second region does not overlap with the gate insulating film,
• wherein the first oxide semiconductor film comprises a third region in contact with the insulating film in a cross-sectional view parallel to a channel length direction of the transistor, and
• wherein the first oxide semiconductor film comprises a fourth region in contact with the gate insulating film in the cross-sectional view parallel to the channel length direction of the transistor.