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AssigneeNexgen Power Systems, Inc.
InventorsClifford Drowley, Ray Milano, Subhash Srinivas Pidaparthi, Andrew P. Edwards, Hao Cui, Shahin Sharifzadeh
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A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.
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A transistor comprising:
A transistor comprising:
Dependencies are inferred from the claim text.