Semiconductor structure and forming method thereof

Abstract

A semiconductor structure and a forming method thereof are provided. The semiconductor structure includes: a substrate, including a device cell area and an isolated area located on a periphery of the device cell area; an isolation structure, located in the substrate of the isolated area; a device gate structure, located on the substrate of the device cell area; and a source/drain doped layer, embedded into the substrate of the device cell area on two sides of the device gate structure, the source/drain doped layer including a source/drain bulk layer, a side wall of the source/drain bulk layer located on an edge of the device cell area and the isolation structure being spaced apart.

Dependencies are inferred from the claim text.