Semiconductor structure including semiconductor devices with different threshold voltages and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• forming a plurality of patterned structures each having at least one channel layer;
• forming at least one interfacial layer on the at least one channel layer of each of the patterned structures, the interfacial layer including an insulating material;
• forming a gate dielectric layer over the at least one interfacial layer on each of the patterned structures such that the at least one channel layer is separated from the gate dielectric layer through the at least one interfacial layer;
• introducing dipole elements into the at least one interfacial layer on at least one of the patterned structures;
• and
• forming a gate electrode on the gate dielectric layer on each of the patterned structures.

A method for manufacturing a semiconductor structure, comprising:

• forming a plurality of patterned structures which respectively include channel layers;
• forming interfacial layers respectively on the channel layers of the patterned structures, each of the interfacial layers including an insulating material;
• forming a plurality of gate dielectric layers over the interfacial layers respectively on the patterned structures;
• forming a plurality of gate electrodes respectively on the gate dielectric layers such that, after forming the gate electrodes, the patterned structures are respectively formed into a plurality of semiconductor devices;
• and
• introducing dipole elements into at least one of the interfacial layers on at least one of the patterned structures before forming the gate electrodes, so as to permit the at least one of the semiconductor devices including the at least one of the patterned structures to have a threshold voltage different from that of the other of the semiconductor devices.