Semiconductor device comprising a lateral super junction field effect transistor

A semiconductor device, comprising:

• a substrate of a first conductivity type that is a base for the semiconductor device;
• a high voltage junction field effect transistor, JFET, over the substrate, wherein the JFET comprising a plurality of parallel conductive layers, the JFET being isolated with a deep polycrystalline trench of a first conductivity type on a source side of the JFET;
• a first conductive layer of the second conductivity type of the parallel conductive layers stretching over the substrate;
• wherein on top of the first conductive layer of the second conductivity type is arranged a plurality of layers forming the parallel conductive layers with channels formed by a plurality of doped epitaxial layers of the second conductivity type with a plurality of gate layers of the first conductivity type on both sides thereof;
• wherein,
• a lowermost layer of the first conductivity type is arranged in the form of consecutive dots with different lengths and distances between them.