Semiconductor power device and method of manufacturing the same

A method of manufacturing a semiconductor power device, comprising:

• forming a first drift layer on an upper surface of a substrate;
• forming a plurality of buried doped regions in the first drift layer, and the buried doped regions are parallel to each other;
• forming a second drift layer on the first drift layer to cover the plurality of buried doped regions;
• forming a strip of doped region in the second drift layer to connect with the plurality of buried doped regions;
• forming a plurality of well regions in an upper surface of the second drift layer, wherein the well regions and the buried doped regions are electrically connected via the strip of doped region;
• forming a gate insulation layer on the upper surface of the second drift layer;
• forming a plurality of gates on the gate insulation layer between the well regions;
• forming a plurality of source regions in the plurality of well regions between the gates;
• and
• forming a plurality of well contact regions in the upper surface of the second drift layer to pass through the source regions and contact with the well regions.