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US 2023/0411488 A1Published application
Semiconductor device having gate electrodes with dopant of different conductive types
AssigneeNanya Technology Corporation
InventorHSIH-YANG CHIU
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, and a second gate electrode. The first gate electrode is disposed on the substrate. The first gate electrode has a first dopant of a first conductive type. The second gate electrode is disposed on the substrate. The second gate electrode has a second dopant of a second conductive type different from the first conductive type.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first gate electrode disposed on the substrate, wherein the first gate electrode is doped with a first dopant of a first conductive type;
- and
- a second gate electrode disposed on the substrate, wherein the second gate electrode is doped with a second dopant of a second conductive type different from the first conductive type.
1 more element
A semiconductor device, comprising:
- a substrate;
- a plurality of first gate electrodes and a plurality of second gate electrodes arranged in an array on the substrate;
- a first dopant of a first conductive type, wherein first gate electrodes are doped with the first dopant;
- and
- a second dopant of a second conductive type different from the first conductive type, wherein the second gate electrodes are doped with the second dopant.
2 more elements
Dependencies are inferred from the claim text.