Method of forming semiconductor device with implanted nanosheets
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Ren XIAO, Nuo XU, Zhiqiang WU
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, implanting oxygen into the second semiconductor layers, and forming a gate structure wrapping around the second semiconductor layers.
Claims20
A method of forming a semiconductor device, comprising:
- forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers;
- removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers;
- implanting oxygen into the second semiconductor layers;
- and
- forming a gate structure wrapping around the second semiconductor layers.
A method of forming a semiconductor device, comprising:
- forming a multi-layer stack on a substrate, wherein the multi-layer stack comprises alternately stacked first semiconductor layers and second semiconductor layers, wherein each of the second semiconductor layers comprises:
- a first sub-layer having an oxygen-doped region;
- and
- a second sub-layer over the first sub-layer, wherein the second sub-layer is oxygen-free;
- removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers;
- and
- forming a gate wrapping around the second semiconductor layers.
A semiconductor device, comprising:
- semiconductor channels extending in a first direction above a substrate and spaced apart in a second direction perpendicular to the substrate, wherein each of the semiconductor channels has an oxygen-doped region;
- a gate wrapping around the semiconductor channels;
- and
- source/drain regions on opposite sides of the gate.
Dependencies are inferred from the claim text.