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US 2023/0411475 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorJHEN-YU TSAI
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes an upper gate electrode, a capping layer on the upper gate electrode and a first dielectric layer partially disposed between the upper gate electrode and the capping layer.
Claims20
A semiconductor device, comprising:
- a substrate having a trench;
- and
- a gate structure in the trench, wherein the gate structure comprising:
- an upper gate electrode;
- a capping layer on the upper gate electrode;
- and
- a first dielectric layer partially disposed between the upper gate electrode and the capping layer.
4 more elements
A semiconductor device, comprising:
- a substrate having a trench;
- and
- a gate structure in the trench, wherein the gate structure comprising:
- an upper gate electrode;
- and
- a capping layer on the upper gate electrode;
- wherein a distance between the capping layer and the substrate is greater than a distance between the upper gate electrode and the substrate.
4 more elements
Dependencies are inferred from the claim text.