Metal field plates and methods of making the same

A bipolar-CMOS-DMOS (BCD) device comprising:

• an analog region comprising at least one bipolar junction transistor (BJT);
• a digital controller region comprising at least one complementary metal oxide semiconductor (CMOS) transistor;
• a power region comprising at least one double diffused metal oxide semiconductor (DMOS) transistor that is formed adjacent to the CMOS transistor;
• a first resist protect oxide formed over a first active region of the CMOS transistor;
• a first dielectric layer formed on at least the CMOS transistor and the DMOS transistors, wherein a thickness of the first dielectric layer is greater than half a distance between the adjacent CMOS transistor and DMOS transistor;
• and
• a patterned metal layer formed on the first dielectric layer and partially covering the first active region of the CMOS transistor.

A method of making an integrated semiconductor device comprising:

• forming a first transistor having a first gate and first sidewall spacers on sidewalls of the first gate;
• forming a second transistor having a second gate and second sidewall spacers on sidewalls of the second gate, wherein the second transistor is spaced a first distance from the first transistor measured between the first sidewall spacers to the second sidewall spacers which face each other;
• depositing a first dielectric layer over a portion of the first transistor and the second transistor, wherein a thickness of the first dielectric layer is greater than the half the first distance;
• and
• forming a patterned metal layer over the first dielectric layer and over a portion of the first transistor and the second transistor.