Gan device with extended drain contact
AssigneeTexas Instruments Incorporated
InventorsDong Seup Lee, Qhalid Fareed
Life of this patent
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Abstract
A semiconductor device is described herein. The semiconductor device comprises a silicon substrate layer. The semiconductor device comprises a first semiconductor layer comprising a gallium nitride layer, the first semiconductor layer disposed over the silicon substrate layer. The semiconductor device comprises a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer comprising an aluminum gallium nitride layer. The semiconductor device comprises a first drain contact extending through the second semiconductor layer and extending into the first semiconductor layer.
Claims24
A semiconductor device, comprising:
- a silicon substrate layer;
- a first semiconductor layer comprising a gallium nitride layer, the first semiconductor layer disposed over the silicon substrate layer;
- a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer comprising an aluminum gallium nitride layer;
- and
- a first drain contact extending through the second semiconductor layer and extending into the first semiconductor layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer comprising a gallium nitride layer;
- forming a second semiconductor layer on the first semiconductor layer, the second semiconductor layer comprising an aluminum gallium nitride layer;
- forming a mask layer on the second semiconductor layer, the mask layer comprising an opening exposing the second semiconductor layer;
- forming a drain contact using the opening of the mask layer exposing the second semiconductor layer, the drain contact extending through the second semiconductor layer and into the first semiconductor layer.
A structure, comprising:
- a gallium nitride layer disposed on a silicon substrate;
- an aluminum gallium nitride layer disposed on the gallium nitride layer;
- a silicon nitride layer disposed on the aluminum gallium nitride layer;
- at least one metallization layers disposed in the silicon nitride layer, the at least one metallization layers forming a drain electrode, a gate electrode, and a source electrode;
- and
- at least one drain terminal extending through the silicon nitride layer and aluminum gallium nitride layer and into the gallium nitride layer, the at least one drain terminal coupled to the drain electrode.
Dependencies are inferred from the claim text.