Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsYounggu JIN, Youngchan KIM, Yonghun KWON
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Abstract
An image sensor includes a substrate having a plurality of unit pixels, a photoelectric device portion and a storage device portion disposed in the substrate and constituting the plurality of unit pixels, a device isolation structure disposed in the substrate and partitioning the plurality of unit pixels, and an overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage, wherein the device isolation structure is partially opened at a boundary between the photoelectric device portion and the storage device portion.
Claims20
An image sensor, comprising:
- a substrate including a plurality of unit pixels;
- a photoelectric device portion and a storage device portion in each of the plurality of unit pixels, the photoelectric device portion and the storage device portion being within the substrate;
- a device isolation structure in the substrate and partitioning the plurality of unit pixels from each other, the device isolation structure being partially open at a boundary between the photoelectric device portion and the storage device portion;
- and
- an overflow gate between the photoelectric device portion and the storage device portion, the overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage.
An image sensor, comprising:
- a photoelectric device portion covered by a micro lens, the photoelectric device portion being configured to accumulate photocharges generated by an incident light focused on the micro lens for a predetermined period of time;
- a storage device portion not covered by the micro lens, the storage device portion being configured to receive and store some of the photocharges accumulated in the photoelectric device portion;
- a device isolation structure surrounding the photoelectric device portion and the storage device portion, the device isolation structure being partially open at a boundary between the photoelectric device portion and the storage device portion;
- and
- an overflow gate in a region in which the device isolation structure is open between the photoelectric device portion and the storage device portion, the overflow gate being configured to chop the predetermined period of time and to provide an overflow path.
An image sensor, comprising:
- a substrate including a plurality of unit pixels;
- a photoelectric device portion and a storage device portion in each of the plurality of unit pixels, the photoelectric device portion and the storage device portion being within the substrate;
- a device isolation structure surrounding the plurality of unit pixels, the device isolation structure being partially open at a boundary between the photoelectric device portion and the storage device portion;
- an overflow gate in a region in which the device isolation structure is open, the overflow gate being configured to provide an overflow path for transferring some of photocharges overflowing from the photoelectric device portion to the storage device portion;
- a first transfer gate transferring the photocharges stored in the photoelectric device portion to a first floating diffusion region;
- and
- a second transfer gate transferring the photocharges stored in the storage device portion to a second floating diffusion region.
Dependencies are inferred from the claim text.