Imaging sensing device and method of manufacturing the same

An image sensing device comprising:

• a substrate;
• first and second semiconductor patterns supported by the substrate and protruding from the substrate, the first semiconductor pattern including a floating diffusion region;
• at least one photoelectric converter configured to detect incident light to generate photo-charge carrying an image in the incident light, the at least one photoelectric converter formed in a portion of the substrate adjacent to the floating diffusion region to generate photo-charge corresponding to incident light;
• at least one transfer transistor supported by the substrate and configured to transfer the photo-charge generated by the at least one photoelectric converter to the floating diffusion region in response to a transfer signal;
• a reset transistor supported by the substrate and configured to initialize the floating diffusion region to a power voltage level in response to a reset signal;
• a drive transistor supported by the substrate and configured to generate an output signal corresponding to an amount of the photo-charge stored in the floating diffusion;
• and
• a selection transistor supported by the substrate and configured to output the output signal generated by the drive transistor, in response to a selection signal,
• wherein at least one of the reset transistor, the drive transistor or the selection transistor comprises a fin gate structured to surround a side surface and an upper surface of the second semiconductor pattern.

A method of manufacturing an image sensing device, the method comprising:

• forming a first insulation layer on a substrate that includes a light-receiving region and an active region adjacent to the light-receiving region, wherein the light-receiving region includes a photoelectric converter configured to detect incident light to generate photo-charge carrying an image in the incident light;
• selectively etching the first insulation layer to form a first opening to partially expose the light-receiving region of the substrate and a second opening to partially expose the active region of the substrate;
• forming first and second semiconductor patterns on the substrate exposed through the first and second openings;
• forming a second insulation layer on the first insulation layer, the first semiconductor pattern and the second semiconductor pattern;
• forming a gate conductive layer on the second insulation layer;
• etching the gate conductive layer, the second insulation layer and the first insulation layer to form a first gate over the light-receiving region of the substrate and a second gate over the active region of the substrate;
• and
• implanting impurities into the first semiconductor pattern to form a floating diffusion.