Solid-state imaging element and imaging apparatus

An imaging device comprising:

• a first photodiode block including eight photodiodes that are arranged in rows and columns;
• and
• a transistor group including an amplification transistor, a first selection transistor and a second selection transistor, wherein the eight photodiodes share the transistor group, wherein
• the first selection transistor and the second selection transistor are disposed along a column direction in a plan view.

An imaging device comprising:

• a first photodiode block including eight photodiodes;
• a second photodiode block adjacent to the first photodiode block in a plan view, the second photodiode block including eight photodiodes;
• and
• an amplification transistor, a first selection transistor, and a second selection transistor disposed between the first photodiode block and the second photodiode block in the plan view, wherein
• the first selection transistor and the second selection transistor are disposed along a first direction in the plan view.

An imaging device comprising:

• a first photodiode block including a plurality of photodiodes that are arranged in an array along a first direction and a second direction in a plan view;
• and
• a first amplification transistor, a second amplification transistor, a first selection transistor and a second selection transistor, wherein
• the plurality of photodiodes share the first amplification transistor, the second amplification transistor, the first selection transistor and the second selection transistor, and
• the first selection transistor and the second selection transistor are disposed along the first direction in the plan view.