Manufacturing method of semiconductor structure

Abstract

Provided is a manufacturing method of a semiconductor structure. The manufacturing method includes the following steps. A first dielectric layer is formed on a first substrate. A second dielectric layer is formed on a second substrate. A first heat treatment is performed on the first dielectric layer and the second dielectric layer, wherein a temperature of the first heat treatment is between 300° C. and 400° C. A first conductive via is formed in the first dielectric layer. A second conductive via is formed in the second dielectric layer. The first substrate and the second substrate are bonded in a manner that the first dielectric layer faces the second dielectric layer, so as to connect the first conductive via and the second conductive via.

Dependencies are inferred from the claim text.