Semiconductor device and semiconductor storage device

A semiconductor storage device, comprising:

• a first chip that includes:
• a first memory cell array including:
• a plurality of first gate electrode layers stacked in a first direction,
• a first semiconductor layer extending in the first direction, and
• a first charge storage layer between the first semiconductor layer and each first gate electrode layer,
• a second semiconductor layer in the first direction from the first memory cell array and in contact with the first semiconductor layer,
• a first conductive layer in a second direction perpendicular to the first direction from the first memory cell array and extending in the first direction,
• a first electrode in contact with the second semiconductor layer, and
• a second electrode in contact with the first conductive layer;
• and
• a second chip bonded to the first chip, the second chip including:
• a third electrode in contact with the first electrode, and
• a fourth electrode in contact with the second electrode, wherein
• a first thickness of the first electrode in the first direction is less than a second thickness of the second electrode in the first direction, and
• a first area of the first electrode at a bonding interface between the first chip and the second chip is greater than a second area of the second electrode at the bonding interface.