Back to results
US 2023/0411319 A1Published application
Semiconductor device and method of making semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsYuya TSUTSUMI, Masaomi EMORI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer covering the second main surface and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first conductive layer covers the inner wall surface.
Claims13
A semiconductor device comprising:
- a substrate having a first main surface and a second main surface opposite to the first main surface;
- and
- a first conductive layer covering the second main surface and including dendrites,
- wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and
- wherein the first conductive layer covers the inner wall surface.
2 more elements
The semiconductor device as claimed in claim 3, wherein the second main surface includes:
- a central region;
- and
- a closed-loop peripheral region situated around the central region and having a constant width,
- wherein the width of the closed-loop peripheral region is less than or equal to 40 μm, and
- wherein an average thickness of a second portion of the first conductive layer, the second portion covering the second main surface in the central region, is greater than the average thickness of the first portion. cm 5. The semiconductor device as claimed in claim 4, wherein an arithmetic average roughness of the second portion is greater than or equal to 1.5 μm.
2 more elements
A method of making a semiconductor device, comprising:
- forming, in a substrate having a first main surface and a second main surface opposite to the first main surface, a via hole extending through the substrate and having an inner wall surface;
- and
- forming a first conductive layer covering the second main surface and the inner wall surface, the first conductive layer including dendrites.
Dependencies are inferred from the claim text.