Semiconductor device and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• providing a first stacked body including a first semiconductor substrate, a first device layer, a first pad electrically connected to the first device layer, and a first electrode electrically connected to the first device layer and embedded in the first semiconductor substrate;
• connecting the first pad to the substrate;
• covering the first stacked body with a first resin body;
• exposing the first electrode by removing a portion of the first semiconductor substrate;
• forming a first insulating layer on the first stacked body;
• polishing the first insulating layer and the first electrode;
• providing a second stacked body on the first stacked body in a direction, wherein the second stacked body includes a second semiconductor substrate, a second device layer, and a second pad electrically connected to the second device layer;
• and
• connecting the second pad to the first electrode, wherein
• in the direction, a part of the first resin body is removed so that a surface of the first resin body is lower than an interface between the first stacked body and the second stacked body.

A method for manufacturing a semiconductor device, the method comprising:

• providing a wiring layer;
• attaching a first stacked body to the wiring layer in a direction, the first stacked body including a first semiconductor substrate, a first device layer, a first pad electrically connected to the first device layer, and a first electrode electrically connected to the first device layer and extending through at least a portion of the first semiconductor substrate;
• covering the first stacked body with a first resin body;
• polishing at least the first resin body, the first electrode, and the first semiconductor substrate;
• recessing the first resin body;
• forming a first insulating layer on the first stacked body and the recessed first resin body;
• polishing at least the first insulating layer and the first electrode;
• and
• attaching a second stacked body to the first stacked body in the direction, wherein the second stacked body includes a second semiconductor substrate, a second device layer, and a second pad electrically connected to the second device layer.