Via rail structure

A device comprising:

• a semiconductor substrate;
• a first and second active regions over the semiconductor substrate extending lengthwise in a first direction;
• a gate structure over the active region extending lengthwise in a second direction perpendicular to the first direction;
• a common source feature and a first drain feature on the first active region and interposed by the gate structure;
• a second drain feature on the second active region, wherein the common source feature on the first active region, and wherein the common source feature and the second drain feature is interposed by the gate structure;
• a source contact on the common source feature extending lengthwise parallel to the gate structure;
• a drain contact on the first and second drain features, the drain contact having an end surface facing the second direction;
• and
• a via rail over the substrate spaced from the active region, the via rail including:
• a main portion extending lengthwise in the first direction, the main portion having a sidewall surface facing the end surface of the drain contact;
• and
• a first jog via extending from the main portion along the second direction and having a sidewall surface facing the second direction, each of the main portion and the first jog via contacting the source contact, wherein a minimum distance between the jog via and the drain contact is greater than a minimum distance between the end surface of the drain contact and the sidewall surface of the main portion of the via rail, and wherein the jog via includes an end surface facing the first direction and being vertically aligned with a center line of the gate structure.

A device comprising:

• a semiconductor substrate;
• an active region over the semiconductor substrate extending lengthwise in a first direction;
• a gate structure over the active region extending lengthwise in a second direction perpendicular to the first direction;
• a source feature and a drain feature on the active region and interposed by the gate structure;
• a source contact on the source feature extending lengthwise parallel to the gate structure;
• a drain contact on the drain feature, the drain contact having an end surface facing the second direction;
• and
• a via rail over the substrate spaced from the active region, the via rail including:
• a main portion extending lengthwise in the first direction, the main portion having a sidewall surface facing the end surface of the drain contact;
• and
• a jog via extending from the main portion along the second direction and having a sidewall surface facing the second direction, each of the main portion and the jog via contacting the source contact, wherein a minimum distance between the jog via and the drain contact is greater than or about equal to a minimum distance between the end surface of the drain contact and the sidewall surface of the main portion of the via rail, and wherein the jog via includes an end surface facing the first direction and being vertically aligned with a center line of the gate structure, wherein the jog via extends entirely across a width of the source contact along the first direction.