Semiconductor device structure and methods of forming the same

A semiconductor device structure, comprising:

• an interconnect structure disposed over a substrate;
• a first conductive feature disposed in the interconnect structure;
• a dielectric layer disposed on the interconnect structure;
• and
• a second conductive feature having a line portion and a via portion, wherein the line portion is disposed over the dielectric layer, the via portion is disposed through the dielectric layer, wherein the line portion includes a top portion having a first width and a footing portion having a second width substantially greater than the first width.

A method, comprising:

• forming a barrier layer over a substrate;
• forming a conductive feature on the barrier layer;
• forming an adhesion layer on the conductive feature, wherein the adhesion layer is formed by a high-density plasma process;
• removing a portion of the adhesion layer until a portion of the adhesion layer disposed on the conductive feature reaches a thickness that is substantially less than a width of a portion of the adhesion layer that is adjacent the barrier layer;
• forming an etch stop layer on the adhesion layer;
• and
• forming a dielectric material on the etch stop layer.