Semiconductor integrated circuit device
AssigneeSocionext Inc.
InventorHideyuki KOMURO
Life of this patent
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Abstract
A semiconductor integrated circuit device includes a plurality of cells each having a fin FET. A plurality of fins constituting the fin FET extend in the X direction and are placed on virtual grid lines equally spaced in the Y direction. The cells include buried power lines: cells larges in size in the Y direction include buried power lines larger in width. The center position of each of the buried power lines in the Y direction is on a virtual grid line or at a center position between adjacent virtual grid lines.
Claims7
A semiconductor integrated circuit device comprising a plurality of standard cells each having a fin field effect transistor (FET),
- wherein
- a plurality of fins constituting the fin FET extend in a first direction and placed on ones of virtual grid lines equally spaced in a second direction vertical to the first direction,
- the plurality of standard cells include a first standard cell and a second standard cell larger in size in the second direction than the first standard cell,
- the first standard cell includes a first buried power line extending in the first direction,
- the second standard cell includes a second buried power line extending in the first direction, the second buried power line being larger in size in the second direction than the first buried power line, and
- a center position of each of the first and second buried power lines in the second direction is on one of the virtual grid lines or at a center position between adjacent ones of the virtual grid lines.
Dependencies are inferred from the claim text.