Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• (a) forming wiring layers on a semiconductor substrate;
• (b) forming a first conductive film on the wiring layers;
• (c) forming a first inorganic film on the first conductive film;
• (d) patterning the first inorganic dielectric film and the first conductive film to form a first wiring and a second wiring next to each other spaced apart by a first distance such that the first inorganic dielectric film is left on an upper surface of each of the first wiring and the second wiring;
• (e) forming a second inorganic dielectric film on the upper surface of each of the first wiring and the second wiring via the first inorganic dielectric film, and forming the second inorganic dielectric film on a side surface of each of the first wiring and the second wiring;
• and
• (f) forming a third inorganic dielectric film on the upper surface of each of the first wiring and the second wiring via the first inorganic dielectric film and the second inorganic dielectric film, and forming the third inorganic dielectric film on the side surface of each of the first wiring and the second wiring via the second inorganic dielectric film,
• wherein the wiring layers, the first wiring and the second wiring configure a multilayer wiring layer where the first wiring and the second wiring are uppermost layer wirings,
• wherein the third inorganic dielectric film formed on the side surface of the first wiring and the third inorganic dielectric film formed on the side surface of the second wiring are spaced apart from each other, and
• wherein a sum of thicknesses of the first inorganic dielectric film, the second inorganic dielectric film and the third inorganic dielectric film formed on the upper surface of the first wiring or on the upper surface of the second wiring is larger than a sum of thicknesses of the second inorganic dielectric film and the third inorganic dielectric film formed on the side surface of the first wiring or on the side surface of the second wiring.

A method of manufacturing a semiconductor device, the method comprising:

• (a) forming a multilayer wiring layer including a first wiring and a second wiring next to each other spaced apart by a first distance on a semiconductor substrate, the first wiring and the second wiring being uppermost layer wirings;
• (b) forming a fourth inorganic dielectric film on an upper surface of each of the first wiring and the second wiring, and forming the fourth inorganic dielectric film on a side surface of each of the first wiring and the second wiring;
• (c) forming a fifth inorganic dielectric film on the upper surface of each of the first wiring and the second wiring via the fourth inorganic dielectric film, and forming the fifth inorganic dielectric film on the side surface of each of the first wiring and the second wiring via the fourth inorganic dielectric film;
• and
• (d) forming a sixth inorganic dielectric film on the upper surface of each of the first wiring and the second wiring via the fourth inorganic dielectric film and the fifth inorganic dielectric film, and forming the sixth inorganic dielectric film on the side surface of each of the first wiring and the second wiring via the fourth inorganic dielectric film and the fifth inorganic dielectric film,
• wherein a thickness of the fifth inorganic dielectric film formed on the upper surface of the first wiring or on the upper surface of the second wiring is more than twice a thickness of the fifth inorganic dielectric film formed on the side surface of the first wiring or on the side surface of the second wiring,
• wherein the sixth inorganic dielectric film formed on the side surface of the first wiring and the sixth inorganic dielectric film formed on the side surface of the second wiring are spaced apart from each other, and
• wherein a sum of thicknesses of the fourth inorganic dielectric film, the fifth inorganic dielectric film and the sixth inorganic dielectric film formed on the upper surface of the first wiring or on the upper surface of the second wiring is larger than a sum of thicknesses of the fourth inorganic dielectric film, the fifth inorganic dielectric film and the sixth inorganic dielectric film formed on the side surface of the first wiring or on the side surface of the second wiring.