Model-based parameter adjustments for deposition processes

A non-transitory computer-readable medium comprising instructions that, when executed by one or more processors, cause the one or more processors to perform operations comprising:

• receiving measurements from one or more sensors of a chemical tank, wherein:
• a first semiconductor processing station is configured to deposit a material on a first semiconductor wafer;
• and
• the chemical tank is configured to provide liquid to the first semiconductor processing station to deposit the material on the first semiconductor wafer, wherein the one or more sensors measure characteristics of the liquid;
• providing an input based on the measurements from the one or more sensors of the chemical tank to a trained model, wherein the trained model is configured to generate an output that adjusts an operating parameter of the first semiconductor processing station such that the thickness uniformity of the material is closer to a target thickness uniformity of the material;
• and
• causing the first semiconductor processing station to deposit the material on a second semiconductor wafer using the operating parameter as adjusted by the output.

A method of adjusting recipe parameters for a semiconductor process, the method comprising:

• receiving measurements from one or more sensors of a chemical tank, wherein:
• a first semiconductor processing station is configured to deposit a material on a first semiconductor wafer;
• and
• the chemical tank is configured to provide liquid to the first semiconductor processing station to deposit the material on the first semiconductor wafer, wherein the one or more sensors measure characteristics of the liquid;
• providing an input based on the measurements from the one or more sensors of the chemical tank to a trained model, wherein the trained model is configured to generate an output that adjusts an operating parameter of the first semiconductor processing station such that the thickness uniformity of the material is closer to a target thickness uniformity of the material;
• and
• causing the first semiconductor processing station to deposit the material on a second semiconductor wafer using the operating parameter as adjusted by the output.