Semiconductor device having air gap and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Yu YEN, Keng-Chu LIN
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Abstract
A method for manufacturing a semiconductor device includes: forming a patterned mask on a patterned structure disposed on a substrate, such that a first mask portion and a second mask portion of the patterned mask are disposed on a first interconnect feature and a second interconnect feature of the patterned structure, respectively; and subjecting the patterned mask to a plasma treatment process such that the first and second mask portions are deformed to form a capping portion to cap a recess disposed between the first and second interconnect features so as to form an air gap.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a patterned mask on a patterned structure disposed on a substrate, such that a first mask portion and a second mask portion of the patterned mask are disposed on a first interconnect feature and a second interconnect feature of the patterned structure, respectively;
- and
- subjecting the patterned mask to a plasma treatment process such that the first and second mask portions are deformed to form a capping portion to cap a recess disposed between the first and second interconnect features so as to form an air gap.
A method for manufacturing a semiconductor device, comprising:
- forming a patterned mask on a patterned structure disposed on a substrate, such that a first mask portion and a second mask portion of the patterned mask are disposed on a first interconnect feature and a second interconnect feature of the patterned structure, respectively;
- and
- subjecting the patterned mask to a plasma treatment process such that parts of the first and second mask portions are deformed to form a capping portion to cap a recess disposed between the first and second interconnect features so as to form an air gap, and such that remaining parts of the first and second mask portions which remain on the first and second interconnect features are integrated with the capping portion to form a capping layer.
A semiconductor device comprising:
- a substrate;
- a patterned structure disposed on the substrate and including a first interconnect feature and a second interconnect feature spaced apart from each other;
- and
- a capping portion disposed to interconnect the first interconnect feature and the second interconnect feature such that an air gap is formed between the first and second interconnect features and below the capping portion.
Dependencies are inferred from the claim text.