Method for improving profile of interconnect structure

A method for manufacturing a semiconductor device, comprising:

• forming a patterned dielectric layer over a substrate, the patterned dielectric layer including a first interconnect opening and a second interconnect opening spaced apart from each other, each of the first and second interconnect openings including a sidewall surface and a bottom surface;
• forming a first film and a second film using a deposition material such that the first film is disposed on an upper surface of the patterned dielectric layer and extends into the first and second interconnect openings to cover an upper portion of the sidewall surface of each of the first and second interconnect openings and such that the second film is disposed on the bottom surface of each of the first and second interconnect openings;
• implanting a dopant into the first film by an implantation process so as to form the first film into a doped film which has an etch selectivity different from that of the second film;
• removing the second film using a selective etching process;
• filling a conductive material into the first and second interconnect openings;
• and
• removing excess of the conductive material and a portion of the doped film over the patterned dielectric layer to form a first interconnect structure, a second interconnect structure, a first doped dielectric insulator surrounding an upper portion of the first interconnect structure, and a second doped dielectric insulator surrounding an upper portion of the second interconnect structure, such that the upper portion of the first interconnect structure is separated from the upper portion of the second interconnect structure by the first and second doped dielectric insulators and a portion of the dielectric layer disposed between the the first and second doped dielectric insulators.

A semiconductor device comprising:

• a substrate;
• and
• an interconnect layer disposed over the substrate and including:
• a dielectric layer;
• an interconnect structure extending through the dielectric layer;
• and
• a doped dielectric insulator disposed to surround an upper portion of the interconnect structure, such that the interconnect structure is separated from the dielectric layer by the doped dielectric insulator.