Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device having a first main surface and a second main surface that is opposite to the first main surface, the method comprising:

• as a first process, forming a first electrode at the first main surface of the semiconductor wafer;
• as a second process, applying a first tape to cover the second main surface of the semiconductor wafer;
• as a third process, forming roughness at a portion of a surface of the first tape;
• as a fourth process, applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, at which the roughness is formed in the third process, at the second main surface of the semiconductor wafer, to cover a portion of the first main surface of the semiconductor wafer, and to cover a side surface of the semiconductor wafer;
• as a fifth process, heating the semiconductor wafer after the first tape and the second tape are applied;
• and
• as a sixth process, forming a plated film at the surface of the first electrode by a plating treatment after the fifth process.