Method of manufacturing semiconductor structure and semiconductor structure

A method of manufacturing a semiconductor structure, comprising:

• providing a base;
• forming a first dielectric layer on the base, wherein the first dielectric layer is provided with grooves arranged in an array, the grooves comprise a first groove and a second groove, and an inner diameter of the first groove and an inner diameter of the second groove have a first difference;
• forming an initial filling layer, wherein the initial filling layer covers a sidewall and a bottom wall of the first groove and covers a sidewall and a bottom wall of the second groove, the initial filling layer in the first groove forms a third groove, the initial filling layer in the second groove forms a fourth groove, an inner diameter of the third groove and an inner diameter of the fourth groove have a second difference, and the second difference is less than the first difference;
• processing the initial filling layer to form a filling layer;
• and
• etching at least one of the filling layer or the first dielectric layer, to form a plurality of etching openings whose inner diameters have a preset difference on a surface of the base.