Method for producing a substrate for the epitaxial growth of a layer of a gallium-based iii-n alloy

Abstract

A method of fabricating a substrate for epitaxial growth of a layer of gallium nitride (GaN), aluminum gallium nitride (AlGaN) or indium gallium nitride (InGaN), comprises the following successive steps: providing a base substrate comprising at least one layer of single-crystal silicon carbide, performing epitaxial growth of a layer of semi-insulating SiC having a thickness larger than 1 μm on the layer of single-crystal SiC to form a donor substrate, implanting ionic species into the layer of semi-insulating SiC so as to form a weakened region defining a thin layer of single-crystal semi-insulating SiC to be transferred, bonding the layer of semi-insulating SiC directly to a receiver substrate having a high electrical resistivity, and detaching the donor substrate along the weakened region so as to transfer the thin layer of single-crystal semi-insulating SiC to the receiver substrate.

Dependencies are inferred from the claim text.