Methods and systems for forming a layer comprising silicon oxide

A semiconductor processing apparatus comprising:

• a reaction chamber comprising a substrate support for supporting a substrate;
• a heater constructed and arranged to heat the substrate in the reaction chamber;
• a plasma module comprising a radio frequency power source constructed and arranged to generate a plasma;
• a plasma gas source in fluid communication with the plasma module;
• a silicon precursor source in fluid connection with the reaction chamber via one or more precursor valves;
• and,
• a controller configured for causing the semiconductor processing apparatus to perform a method comprising:
• positioning a substrate on a substrate support in a reaction chamber;
• and
• executing a plurality of deposition cycles, the deposition cycles comprising a silicon precursor pulse that comprises exposing the substrate to a silicon precursor, the silicon precursor comprising silicon and one or more of a group 13 element and a group 15 element;
• and
• a plasma pulse that comprises exposing the substrate to a plasma treatment, wherein the plasma treatment comprises generating a plasma,
• thereby forming a layer comprising silicon on the substrate.